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    • 专利摘要:
    parallel plate plasma intensified chemical vapor deposition reactor with capacitive coupling the present invention relates to a parallel plate plasma intensified chemical vapor deposition reactor with capacitive coupling comprising a gas distribution unit that is integrated with an RF electrode and comprising a gas outlet. the aim of the present invention is to provide a parallel plate reactor of the type referred to with which layers with high homogeneity in thickness and quality can be produced. the goal is solved by a parallel plate plasma intensified vapor deposition reactor with capacitive coupling of the type mentioned in which the gas distribution unit comprises a multi-stage shower head constructed in such a way as to provide an independent distribution adjustment gas and gas emission profile of the gas distribution unit.
    公开号:BR112012019479B1
    申请号:R112012019479-8
    申请日:2010-07-09
    公开日:2021-02-23
    发明作者:Joachim Mai；Benjamin Strahm；Thomas Schulze；Arthur Buechel
    申请人:Meyer Burger (Germany) Gmbh；
    IPC主号:
    专利说明:

    The present invention relates to a chemical vapor deposition reactor intensified by parallel plate 5 plasma with capacitive coupling, comprising a gas distribution unit which is integrated in an RF electrode and which comprises a gas outlet.
    Capacitive coupled plasma vapor deposition reactors (PECVD) 10 are generally used to deposit thin films on substrates, such as semiconductor substrates for the manufacture of solar cells. It is important for a plasma manufacturing process to be carried out with high spatial uniformity of the substrate surface. That is, a deposition process should be carried out so that the deposited material is of uniform thickness and quality in all positions on the substrate surface.
    The concept of such parallel plate reactors is characterized by an array of electrodes similar to 20 parallel plates in which these electrodes are arranged in a temperature-controlled, closed and gas-proof chamber. The «closed chamber is connected to its own vacuum pumping system and has its own gas supply. The parallel plate reactor is often used in a 25 vacuum chamber that is supplied with its own pumping system, as well.
    Generally, an asymmetric RF voltage is used to supply a plasma generated in the electrical powered parallel plate arrangement. The RF voltage is supplied by an RF generator. Typically, the same plasma excitation frequencies used are in a region between 13 MHz to about 80 MHz. At least one of both parallel electrodes, in particular the RF-supplied electrode, has a gas distribution system to supply the reaction compartment in the gas parallel plate reactor.
    The reaction compartment of a parallel plate reactor is mainly defined by the dimensions and distance between the electrodes as well as by the walls of the reaction chamber. The so-called pumping grids provided on the sides of the RF electrode are used for an electrical separation of the reaction compartment in the direction of the gas escape. The pumping grids consist of an electrically conductive material and are impermeable to gas. Often, two pumping grids are applied in an opposite arrangement. With that construction, a mutual symmetrical purge of the reaction compartment is possible. The distance of the electrodes to each other is determined by the 15 technological needs and is typically in a region between about 10 mm and 30 mm. The substrates to be processed are normally placed on a grounded electrode.
    The technological advantage of a parallel plate reactor concept is the existence of a defined and closed reaction compartment and a small volume of buffer of «gas available from supplied gases. Therefore, the time between an ignition of the plasma until an adjustment of an equilibrium state of the chemical reactions of plasma and thereby the adjustment of a composition of stationary gas in the reaction compartment is short. This is especially important for a defined deposition of very thin layers. An eventual existence layer gradient formed by the transient oscillation behavior of the plasma deposition processes 30 will be greatly reduced by this.
    With a parallel plate reactor, the demands for cleaning and special requirements of certain processes can be easily met. By the consequent separation of the gas compartment between the parallel plate reactor and the vacuum chamber in which the reactor is placed, different magnitudes of pressure difference between the atmosphere and the process pressure are achieved. Therefore, the partial pressure and through this, the influence of atmospheric gases on the preparation process can be greatly reduced. In addition, a diversion of process gases used in the vacuum chamber and adjacent chambers is prevented.
    It is also very advantageous to have a separate cleaning of the parallel plate reactor, independent of the compartment surrounding the vacuum chamber. Due to the more compact assembly of the parallel plate reactor, a well-performed thermal separation of the vacuum chamber is possible. Integrated wall heaters for homogeneous temperature control of the substrates.
    The effectiveness of surface processing by means of a parallel plate reactor is essentially dependent on the possible process parameters and the requirements for homogeneity achievable in this. The important process parameters are, for example, the plasma excitation frequency, the RF power, the process pressure, the entire gas flow as well as the mixing ratio of the gases used. For deposition of plasma-enhanced chemical vapor (PECVD), the achievable layer deposition rate is often of great importance. The rate of layer deposition is mainly influenced by the frequency of plasma excitation used and the RF power used through it. The higher the excitation frequency, the greater the density of electrons and ions in the plasma. At the same time, the burning voltage on the electrode array can be reduced, whereby the energy of the ions that come on the surface of the substrates decreases with this. In addition, the dissociation or fragmentation of the gases used is more intense at higher plasma excitation frequencies, where, in particular, higher deposition rates can be achieved.
    Many projects have been developed to improve the spatial uniformity of plasma manufacturing processes. Some designs, Patent Application under U.S. No. 2009/0159423 A1 concentrate on the formation of a uniform plasma density since asymmetry in plasma density is not desirable because it produces a corresponding asymmetry in the plasma process that is carried out on the substrate. In addition, it is necessary to provide a uniform gas distribution in a plasma chamber that can be achieved by a so-called shower head electrode. The shower head consists of one or more gas distribution plates or diffusers with a plurality of holes that form numerous gas outlets in the shower head. The shower head combines the functions of an RF electrode and a gas distribution in one unit.
    Due to the holes in the shower head electrode plate, there is often, depending on the speed of the gas flow through the holes and the cross section of the holes, an "image" of the distribution of holes in the gas distribution plate on the deposited layer. on the substrate by means of the shower head. That is, the deposited layer is formed with a wave-like surface, in which the wave crests are formed directly under the holes.
    In addition, known reactors often suffer from an incomplete shielding of the reactor environment, resulting in an unwanted insertion of particles into the reactor chamber.
    It is, therefore, the objective of the present invention to provide a chemical vapor deposition reactor intensified by parallel plate plasma with capacitive coupling of the aforementioned type with as many layers with high thickness and high quality homogeneity as can be produced.
    The objective is solved by a vapor deposition reactor 5 intensified by parallel plate plasma with capacitive coupling, comprising a gas distribution unit that is integrated in an RF electrode and comprises a gas outlet, in which the unit The gas distribution unit comprises a 10 stage multi-stage shower head constructed in such a way as to provide an independent adjustment of the gas distribution and gas emission profile of the gas distribution unit.
    The distribution of gas in the deposition area of a parallel plate reactor is predominantly dependent on the 15 concrete conditions for the supply of fresh gas gas and the special gas outlet conditions for used gases or used gas decomposition products which do not contribute for additional layer formation. As mentioned above, in known shower heads used in 20 parallel plate reactors, the gas emission profile was directly dependent on the gas distribution provided by the respective gas distribution unit and leads to the surface profile similar to the aforementioned wave. deposited layer. In contrast to this, the present invention suggests a gas distribution unit which comprises a shower head construction which separates the gas distribution from the formation of the gas emission profile and which, through this, is able to adjust the gas distribution on the one hand and provide a certain gas emission profile on the other hand 30 independently of each other. This results in uniform layer deposition, especially in the case of thin films.
    Preferably, the inventive concept can be implemented by a vapor deposition reactor intensified by parallel plate plasma with capacitive coupling, being that it comprises a gas distribution unit that is integrated in an RF electrode and comprises a gas outlet, in that the gas distribution unit comprises, in the direction of gas flow through the reactor, at least a first perforated gas distribution plate and at least a second perforated gas distribution plate which is spaced from the first gas distribution plate , with the holes in the second gas distribution plate being constructed with a larger cross section than the holes in the first gas distribution plate, and in which volumes of separate gas buffer are provided between single holes or groups of holes in the first gas distribution plate and the second gas distribution plate to which the volumes of gas buffer connect them, respectively, to which the volumes of gas gas plug are constructed with a larger cross section than the holes in the second gas distribution plate.
    The necessary requirements of the gas supply for an adjustment of a homogeneous layer deposition can be achieved in the present invention by patterns adapted locally opposed to the deposition area and by individual dimensions of the gas holes in the plates other than the shower head. According to the present invention, the sizing of the gas holes is done in such a way that the amount flowing through each of the holes is defined depending on the entire gas flow which is necessary for the plasma process. For this reason, a corresponding gas plug within the electrode formed by the volumes of separate gas plug between the holes of the first and second gas distribution plates is used, which leads to the effect that the gas flow can provide a enough gas for each individual gas hole.
    The invention offers the possibility to provide a favorite gas management and thereby adjust the profile of the layers deposited on the substrates. The first gas distribution plate of the shower head serves, due to its small holes, as a plate with low gas conductance that leads to a relatively small gas flow diameter of the gas flow that escapes from the holes of the first plate . If this gas flow had an impact on the surface of the substrates directly, the areas on the substrates that are below that gas flow would be deposited with a layer thickness greater than other areas.
    According to the present invention, the gas flow does not collide directly on the surface of the substrate, but flows within the volume of gas buffer corresponding to each of the holes in the first gas distribution plate, respectively. The gas flow distributes in the compartment provided by the corresponding gas buffer volume that follows each hole in the first plate, which leads to an expansion of the gas flow diameter. As the volumes of gas plug 20 connect the holes of the first and second gas distribution plates, the gas flow thereafter passes through the holes in the second gas distribution plate of the shower head. The second gas distribution plate is preferably parallel to the first gas distribution plate and has a higher gas conductance than the first gas distribution plate through larger holes formed in the second gas distribution plate. Therefore, the gas flows well distributed through the holes in the second gas distribution plate with a wide spreading angle and a high uniformity.
    By an appropriate choice of the gas flow conductance of the first and second gas distribution plates, the gas flow out of the holes of the second gas distribution plate can be adjusted in such a way that the gas flows escaping from holes adjacent to the second gas distribution plate overlap and form on the surface of the underlying substrate a layer with a somewhat homogeneous thickness. By separating the gas buffer volumes from one another, moreover, it is realized that there is no unwanted intermixing of gas flows escaping from the holes of the first gas distribution plate.
    The principle of the present invention also does not work with more than two gas distribution plates in the shower head and in a case in which several holes in the first plate and / or the second plate are combined with groups of holes.
    The reactor of the present invention can be realized in such a way that the holes in the second plate are constructed with a larger cross section than the holes in the first plate, and the volumes of gas buffer are constructed with a larger cross section than the holes in the second plate. In that construction, the gas buffer volumes have a cylindrical shape 20 that can be constructed simply by drilling. In other embodiments of the invention, the 'side walls of the gas buffer volumes can be angled so that the gas buffer volumes have a smaller diameter near the first plate and a larger diameter near the second plate. In any case, the gas buffer volumes are large and long enough to allow a balloon-like expansion of the gas flow in the gas buffer volume and good gas distribution so that the gas can be carried almost directly with high homogeneity through the 30 large holes in the second plate on the substrate.
    The relationship between the diameter of the holes in the second gas distribution plate and that of the holes in the first gas distribution plate can be easily adapted to the respective requirements of the reactor and the parameters of deposited layers.
    According to another embodiment of the present invention, the first gas distribution plate has such a gas flow conductance that it is capable of producing a decrease in gas pressure that is necessary to obtain a gas blocking effect by the first gas plate. gas distribution. To achieve this, the gas flow conductance of each gas hole and the integral gas flow conductance of all 10 holes on the first gas distribution plate must adjust in such a way that an adequate decrease in gas pressure results in gas distribution unit. That decrease in gas pressure should be adjusted so that the gas blocking effect known in vacuum technology 15 is achieved for each hole.
    The gas blocking effect is also known as a blocked flow which can be observed when venting air from a vacuum box. When opening a ventilation valve, air flows from the environment at low pressure and at a high speed. That speed can reach, at its maximum, sonic speed and • the amount flowing through it is independent of the internal pressure of the box. To achieve that effect in the present invention, it is therefore recommended to construct the holes of the first gas distribution plate with such a cross section so that the gas flowing through these hards during operation reaches sonic speed. Preferably, the sizing of the gas holes is done in such a way that the gas blocking effect will be maintained in the entire area of change of the entire gas flow and process pressure for all possible processes.
    In a favorite embodiment of the present invention, in order to obtain the blocking effect, the first gas distribution plate comprises a perforated metal sheet with a defined hole arrangement.
    For an adequate fixation of the perforated metal sheet, in an additional advance of that modality, an additional perforated plate can be used. That additional perforated plate can be used as a mask for the metal sheet to drill to achieve an independent adjustment of the gas distribution and integral gas conductance of the holes selected in the metal sheet of it.
    The first, as well as the second gas distribution plate can be formed of two or more single plates placed on top of each other so that not only the gas distribution holes holes, but also the volumes of gas buffer between the holes can be formed by the special construction of the first and / or second gas distribution plate.
    In addition, the holes in the second gas distribution plate can be provided with countersinks on the side of the gas exhaust and / or on the side of the gas inlet. Such countersinks can be used to properly adjust the gas emission profile of the gas distribution unit.
    According to another example of the present invention, the hole density of the second gas distribution plate is greater at its edges, in a region close to the pumping grids provided laterally in the RF electrode, respectively, than in the central part of the second gas distribution plate. In doing so, the gas flow is more direct and stronger at the edges of the plate. Increasing the flow at the edges helps to replace the energy lost due to the friction of gas with the edges, which maintains the harmonic movement of the flow.
    In addition, it may be useful to provide additional rows of holes on the gas distribution plates on an outer edge of the gas distribution unit, towards the gas outlet of the reactor.
    Through the dimensioning and optimal arrangement of the individual gas holes, the gas flow velocity in the respective gas hole changes depending on the entire gas flow. That effect has a concurrent influence on the gas outlet profile of the gas bore. Depending on the amount of the gas particles' flow velocity and the distance of the electrons from one another, a local layer thickness variant on the substrates can occur in the area of the gas holes. In that case, it may be necessary to control other process parameters.
    For a homogeneous gas removal of the used gases out of the deposition region, towards the gas outlet of the reactor, a homogeneous gas escape through the pumping grids provided laterally in the reactor's RF electrode is required. This will normally be achieved by multiple gas escapes arranged in the direction of the gas flow through the reactor after the pumping grids or by extensive devices that allow flow correction. In high amounts of gas flow and at a short distance from electrodes, a significant decrease in pressure can occur in the direction of the pumping grids depending on the respective process pressure. Due to high electrode dimensions and, therefore, long paths of gas particles to the electrode edge and to the gas outlet, the homogeneity of reachable layer thickness can also be reduced. To reduce that problem, a double-sided gas exhaust in the discharge gap of the parallel plate arrangement can be used and the gap between the electrodes can be adapted to the respective technological requirements.
    In a specific example of the present invention, the gas purge channels that extend in the direction of the gas flow through the reactor are provided between the pumping grids provided laterally on the RF electrode, respectively, and the gas outlet of the reactor. The gas purge channels provide a gas forcing unit 5 behind the pumping grids through which a direct flow of gas towards the reactor gas outlet orifice (s) can be avoided. In this way, a new gas flow management behind the pumping grids can be provided, offering the possibility of achieving almost perfect deposition uniformity over the complete deposition area of the parallel plate reactor.
    In a variant of that modality, the purging channels are formed by several parallel gas deflectors provided in the direction of the gas flow through the reactor behind the pumping grids. The gas deflectors force an elongated and stretched flow of gas towards the gas outlet. The use of gas deflectors is a method to significantly reduce the irregularity of gas flow within the plasma. 20 Furthermore, it has been shown that in order to reduce the effect of converging gas flow lines on plasma uniformity, the pumping zone should have a certain length. This length will be reduced in the present invention by applying a force on the gas flow in order to obtain a direct flow in the desired direction. This force is, in this example of the present invention, applied with the use of gas deflectors in the form of gas outside the reactor. That is, these gas deflectors do not disturb the layer formation and reaction in the processing compartment of the reactor. The reduction of the pumping zone leads to the reduction of the reactor trace for a given electrode area.
    In an alternative embodiment of the present invention, the vent channels can be integrated into at least one wall of the reactor to provide a relatively long pumping zone. In this case, it is especially recommended to provide pumping from the top of the reactor. With such a scheme, the length of the gas path between the pumping grid and the pumping orifice can be extended while an additional dimension in the deposition plane for that additional gas path can be minimized. Therefore, the new gas exhaust scheme makes it possible to significantly improve the reactor trace for a given deposition area without reducing the excellent deposition uniformity achieved by the long path length between the pumping grid and the gas outlet. .
    In a desired version of this embodiment of the invention, the gas deflectors comprise several parallel panels provided in the direction of the gas flow through the reactor behind the pumping grids. The panels can be rectangular panels installed to force the gas flow in the desired flow direction. The use of panel-shaped deflectors allows easy and definitive directing of the gas flow over a long distance. Therefore, the use of deflectors makes it possible to avoid any irregularity of gas flow within the plasma due to the gas flow lines converging towards the pumping orifices. Without the use of deflectors, the pumping zone must be long enough to reduce the effect of converging gas flow lines in the direction of the pumping orifices on plasma uniformity. Therefore, the use of deflectors allows a reduction of the reactor's trace for a given electrode area by avoiding a large pumping zone. The realization of a highly targeted gas flow depends on the length of the panels. By increasing the length of the panels, a better direction of gas flow can be achieved.
    In an additional option of the present invention, at least one additional grid is provided between the pumping grids and the gas outlet of the reactor, said additional grid having a reduced gas flow conductance compared to the pumping grid. The additional grid with lower gas flow conductance allows to maintain the direction and increase the accuracy of gas flow produced by the pumping grid.
    Preferably, the additional grid has such an integral gas flow conductance that said grid is capable of producing, in a pre-set gas flow, a decrease in gas pressure that is necessary to obtain a gas blocking effect, as mentioned above. Furthermore, it is possible to dimension the reactor's pumping grids so that the gas blocking effect is provided by the pumping grids in a pre-set gas flow.
    In a preferred version of the present invention, the gas outlet port of the reactor is provided in a deposition plane or on top of the reactor. Providing the outlet orifice in a deposition plane is the most optimal method for obtaining a targeted flow due to the very short distance between the deflectors and the outlet orifice. Install the outlet port at the top to provide a very long distance between it and the inlet port, which acts to redirect the flow over the distance.
    In the case of large-scale depositions of thin layers with a parallel plate reactor, the achievable homogeneity of the deposition is mainly influenced by the distribution of gas and plasma in the deposition area between the parallel electrode arrangement. The plasma distribution is strongly dependent on the homogeneous current and voltage distribution on the electrodes. Depending on the size of the electrodes and the frequency of plasma excitation used, the homogeneity of the plasma formation can be adapted, mainly, on the respective requirements by a skillful choice of the RF power supply position or, in the case where there are more than a place with an RF supply, from the positions of the RF power supply devices. Due to the increased electrical influence of the grounded side walls on the RF electrode in a border area of the electrode array, a homogeneous electric field between the RF electrode and the grounded electrode can be formed, which leads to non-homogeneous surface processing. of the substrates. This effect can be reduced by changing the edge geometry of the RF electrode.
    For this purpose, the shower head comprises, in an embodiment of the present invention, elongated vertical side walls that form a vertical surrounding wall of the RF electrode. This almost local edge elevation formed by elongated lateral or vertical side walls of the shower head leads to a higher symmetry of the plane proportions between the flat RF electrode and the flat grounded electrode in the edge area of the parallel plate arrangement.
    In addition to the vertical edge elevation, in a relatively similar variant of the present invention, the shower head may comprise elongated stuck side walls. If you do, an inclined shift in the internal plane of the RF electrode in the direction of the edge elevation can be formed. Therefore, the danger of gas turbulence, especially in the direction of gas transport, can be reduced.
    In the following, the favorite examples of the present invention are described in further details, in which Figure 1 shows, schematically, a side sectional view of a parallel plate reactor with capacitive coupling according to an embodiment of the present invention; Figure 2 shows, schematically, a section of a gas distribution unit of a parallel plate reactor with capacitive coupling according to an embodiment of the present invention; Figure 3 shows, schematically, a section of another gas distribution unit of a parallel plate reactor with capacitive coupling according to a second embodiment of the present invention; Figure 4 shows, schematically, a section of yet another gas distribution unit of a parallel plate reactor with capacitive coupling according to a third embodiment of the present invention; Figure 5 shows, schematically, a top view in a hole distribution of a gas distribution plate of a parallel plate reactor with capacitive coupling according to another embodiment of the present invention; Figure 6 shows, schematically, the top view in a region on a pumping grid of a parallel plate reactor with capacitive coupling according to an additional embodiment of the present invention; Figure 7 shows, schematically, a side sectional view of a parallel plate reactor with capacitive coupling according to an even further embodiment of the present invention; Figure 8 shows, schematically, a side sectional view of a region in a pumping grid of a parallel plate reactor with capacitive coupling according to an additional embodiment of the present invention; and Figure 9 shows, schematically, a side sectional view of a region in another pumping grid of a parallel plate reactor with capacitive coupling according to another embodiment of the present invention. Figure 1 schematically shows a side sectional view of a parallel plate reactor with capacitive coupling 1 according to an embodiment of the present invention. The parallel plate reactor 1 is, in the example described, a large area parallel plate reactor for depositions of plasma intensified chemical vapor (PECVD). The reactor 1 is placed in a vacuum chamber 6.
    The reactor 1 comprises an RF electrode 2 comprising a gas distribution unit 10. The gas distribution unit 10 is formed as a so-called shower head and connected with a single or multiple gas connections. The gas distribution unit 10 is of particular importance according to the present invention. This significantly influences the homogeneity of plasma processing in reactor 1. The gas distribution unit 10 consists of the example shown of a first and a second gas distribution plate 12, 13 arranged in parallel at a short distance from each other and will be described in more detail with reference to Figures 2 to 4.
    The RF 2 electrode has a symmetrical construction and can be connected to a single or multiple electrical supplies. Said single or multiple electrical supplies can be used flexibly as a gas inlet, as heating or cooling connections of the electrode and / or as mechanical supports of the RF electrode 2. The RF electrode 2 comprises, in the side view shown, stuck edges 52. On the other sides not shown in the reactor, the RF electrode 2 is formed with vertically elongated edges. The symmetry of the RF electrode 2 is used to guarantee uniform deposition up to the side walls of the reactor, reducing or eliminating the so-called Telegraph non-uniformity. The stuck edges of the RF electrode 2 are used in the direction of pumping the gas through the reactor to achieve a non-turbulent gas flow in the plasma of the reactor 1, while the vertically elongated edges for the walls of the RF electrode 2 are preferably at the side side, that is, not in the pumping direction, to avoid any change of plasma up to the side walls of the reactor.
    On a bottom 51 of the reactor 1, the substrates 5 will be arranged to deposit at least one layer on it. The bottom 51 and the electrode 2 are spaced apart from each other and terminate, along with pumping grids 4a, 4b provided laterally in the electrode 2, the plasma compartment 9. An electrode supply 3 serves simultaneously as a supply of RF and as a gas supply. The electrode supply 3 is electrically isolated and integrated into the reactor 1, as well as the vacuum chamber 6 in a vacuum-proof manner.
    A gas plug 7 ensures a continuous gas supply from the individual gas holes of the gas distribution unit 10 without considerable pressure differences in the gas plug 7. The vacuum chamber 6 comprises a pumping port 11 for connection to a vacuum pumping system. The also shown pumping orifices 8a, 8b serve for a gas escape of process gases used outside the plasma compartment 9. The pumping orifices 8a, 8b are connected with a separate vacuum pumping system and must be supplied accordingly with the present invention either on the deposition plane as shown in Figure 1 or on the top of the reactor as shown in Figure 7. The gas pressure in the vacuum chamber 6 is normally in a region between about 10 "1 Pa and <10 ' 4 Pa. The process pressure in the parallel plate reactor 1 is in a region from about 1 Pa to several 100 Pa.
    As mentioned above, a defined supply of fresh gas and a defined distribution of said gas are very important for the PECVD processes in parallel plate reactors, as in reactor 1 in Figure 1. The necessary fresh gas distribution is, on the other hand , determined by the technological requirements and the concrete dimensions of the plasma compartment 9. The technological requirements include the process conditions that are necessary to achieve a certain quality of the processed substrates, the requirements for the homogeneity of the process and for the speed of the process. The process conditions are defined by choosing the process parameters. Important process parameters are the number and type of gases used, the gas flows of the individual gases, the entire gas flow adjusted to it, the process pressure and the electrical process parameters. The electrical process parameters involve the plasma excitation frequency, the effective electrical power used by the plasma and the special electrical process conditions, for example, whether a continuous or pulsed electrical power is used for the formation of plasma.
    A necessary adaptation of the gas distribution depending on technological requirements can be advantageously achieved by the gas distribution unit 10 used in the present invention. Figures 2 to 4 schematically show enlarged sections of various options for carrying out the region 100 marked in Figure 1. Figure 2 shows a variant with two gas distribution plates 12, 13 arranged on top of each other. The first gas distribution plate 12 has a defined hole arrangement with individual holes 14 and defined gas conductance values. The first gas distribution plate 12 acts as a gas distribution with a simultaneous adjustment of a definite decrease in pressure on the first gas distribution plate 12. In this way, an overpressure in the gas plug 7 is created in comparison to the pressure of the process in the plasma compartment 9. This overpressure depends on the entire gas flow through the first gas distribution plate 12.
    Such a decrease in pressure is large enough, the so-called gas blocking effect occurs. In that case, the amount of gas flowing through each hole 14 of the first gas distribution plate 12 is only determined by the primary pressure.
    The flow rate of the gas particles in the respective hole 14 changes depending on the gas flow through each hole 14, whereby the gas emission profile also changes. This problem is solved by the second gas distribution plate 13. Within the second gas distribution plate 13, volumes of gas buffer 15 are formed. The dimensions of the gas buffer volumes 15 are adjusted in such a way that the cavities of the gas buffer volumes 15 can keep the gas flowing in them from the holes 14 certainly without the formation of a considerable back pressure. The gas buffer volumes 15 are sealed against each other in such a way that no considerable gas exchange is possible between the gas buffer volumes 15. By the cross-sectional extent of the gas buffer volumes 15 compared to the holes 14, the velocity of the gas particles is greatly reduced in the gas buffer volumes 15.
    The second gas distribution plate 13 which is opposite the substrates 5 contains holes 16 which are connected to the volumes of gas buffer 15. The holes 16 provide easy adaptation of the gas emission profiles. The gas emission profiles of each of the holes 16 can be configured by defining the length and cross-section of the holes 16 as well as by additional countersinks of the holes 16 on the side of the gas exhaust and / or on the side of the gas inlet either by a continuous change or by steps in the diameter of the holes.
    This construction of the invention of the gas distribution unit 10 allows an independent adjustment of the gas distribution and the gas emission profiles.
    The second gas distribution plate 13 can be composed of two or more metal sheets or individual perforated plates. Preferably, each of said metal sheets or plates has a defined arrangement of holes with defined diameters. The thickness of the respective metal sheet or plate determines the length of the respective holes.
    Figure 3 schematically shows a further development of the arrangement of Figure 2. Instead of the first gas distribution plate 12, in Figure 3 a metal sheet 18 is used for a definite adjustment of the gas pressure decrease to provide the blocking effect. described above. The metal sheet 18 is fixed by a perforated plate 17 which provides a defined position and sealing of the holes 20 in the metal sheet 18. In addition, the perforated plate 17 can predefine the gas path through the metal sheet 18 or the number of those holes 20 in the foil 18 which are effective for defining the integral gas conductance of the foil 18. For that purpose, the perforated plate 17 can be used as a mask for the foil 18. The gas can only flow through those holes 20 of the metal sheet 18 over the holes 19 of the perforated metal sheet 17 that are provided. For this case, it is advantageous that the metal sheet 18 can be formed with a relatively simple and homogeneous pattern of holes 20 with the same density and dimensions of the holes 20. Therefore, a simple adaptation of the integral gas conductance of the first plate arrangement gas distribution, regardless of gas distribution, is possible.
    The second gas distribution plate 13 ', the gas buffer volumes 15' and the holes 16 'have the same function as the second gas distribution plate 13, the gas buffer volumes 15 and the holes 16 in Figure 2 .
    Figure 4 shows schematically an additional variant of a gas distribution unit usable in reactor 1 of the present invention. As shown in Figure 3, a metal sheet 22 is used here together with the perforated plate 21 to adjust the gas blocking effect. In comparison to Figure 3, not all holes 26 of the metal sheet 22 of Figure 4 have a corresponding volume of gas buffer. Instead, several holes 26 of the foil 22 open outwardly in a volume of common gas plug 25. That volume of gas plug 25 can be a large hole or a specific geometric notch. For example, Figure 4 shows a combination of two holes 26 of the foil 22 which it discharges in a volume of common gas buffer 25.
    On the side of the substrates 5, in the example shown, the volume of gas buffer 25 is connected to three holes 27 of the second gas distribution plate 23. This variant of a gas distribution unit shows the possibility that it is not absolutely necessary, in the present invention, copy the hole arrangement of the first gas distribution plate from the inlet side to the second gas distribution plate from the inlet side of the substrate side. Thus, there is a possibility to change the hole density regardless of the low blocking effect. The number of holes to be combined and the special hole arrangement on the side of the substrates 5 results from the respective technological requirements.
    Figure 5 schematically shows a bottom view of the second gas distribution plate 13 of an RF electrode 2 or gas distribution unit 10, respectively, as shown in Figure 1, from the side of the substrates 5. The second gas distribution plate 13 comprises a central region 28 with holes 16 arranged with a relatively low hole density and a surrounding region 29 with a higher hole density. In the direction of purging the gases, additional rows 30a, 30b of holes 16 are provided. With changes in the density of the holes in relation to the chosen regions of the RF 2 electrode, the necessary supply of fresh gas can be adapted to the requirements of local gas consumption in the plasma process. For example, this allows a correction of the layer characteristics in the border regions of the substrate electrode or an improvement of homogeneity of the deposition in the border regions.
    In addition to a defined supply of fresh gases, a defined exhaust of used gases is very important for the quality and homogeneity of plasma processing.
    Figure 6 shows schematically half a section of view through a parallel plate reactor, such as the reactor in Figures 1 or 7, in which the section is made in parallel to the RF electrode 2 through a part of the plasma compartment and the pumping grids. Figure 6 shows a pumping grid 31, a pumping orifice 34 and several pumping channels 32 that are separated by walls 33. The distribution of the exhaust gas in the various pumping channels 32 improves the homogeneity of the gas escape out of the plasma compartment significantly, since the pumping channels 32 prevent disturbances of gas flow within the plasma. It is crucial for a homogeneous pumping result in the region of the pumping grid 31 that the pumping channels 32 are supplied with the same gas conductance up to the pumping orifice 34. The gas conductance is defined by the cross section and the length of the channels pumping 32. A high number of pumping channels 32 promotes uniformity of the gas escape to the pumping orifice 34.
    Figure 7 shows schematically an additional variant for a compact integration of pumping channels 4 2a, 42b in the walls 35, 35 'of a parallel plate reactor 1' according to the present invention. The process gases are supplied in this variant by an electrode supply 37 in a gas plug 38 of an RF electrode 36. The gases flow through the integrated gas distribution unit 39 of the RF electrode 36 to a process compartment 40 After that, the gases are pumped out of the process compartment 40 through pumping grids 41a, 41b provided laterally at the RF electrode 36, respectively. For this purpose, pumping holes provided in the example shown at the top of the reactor 1 'are connected with a suitable pumping system.
    The performance of a vacuum pump of said pumping system is then guided through the pumping channels 42a, 42b to the pumping grids 41a, 41b. As shown in Figure 6, the pumping channels 42a, 42b are formed by several individual channels. By escaping gas through the walls 35, 35 'of the parallel plate reactor 1', the pumping channels 42a, 42b can be formed very space-saving and compact. The direction of the gas leak can be adapted to the special design of the 1 'reactor.
    In the example shown in Figure 7, the gas leak is directed to the top of the reactor 1 ', close to the center of the RF electrode 36. In other embodiments not shown in the present invention, it is also possible to guide the gas to a region at the bottom or for the side walls of the parallel plate reactor. The latter alternatives, however, have the disadvantage that laborious processing of the pumping channels is necessary and that the pumping channels have to be made with a certain minimum length.
    Figure 8 shows schematically two cross-sectional views of a parallel plate reactor according to the present invention. The top view shows half of a vertical section, and the bottom view is a top view in a section through a plasma compartment 48 of the reactor. An RF electrode 50, a pumping grid 44 and an additional grid 45 are provided between a bottom 49 and an upper wall 47 of the reactor. The RF electrode 50 and the bottom 49 form the plasma compartment 48. The plasma compartment 48 is bounded in the direction of purging the gases by the pumping grid 44. The additional grid 45 is arranged in the direction of purging the gases, which is shown by the arrows in Figure 8, directly behind the pumping grid 44.
    By a defined configuration of the additional grid 45 which leads to a defined gas conductance of the additional grid 45 and depending on the entire gas flow, a definite decrease in pressure can be obtained in the additional grid 45. For example, the additional grid 45 can be formed with a defined number of suitable holes or slots with defined gas conductance values. In a case where there is such a decrease in pressure in the additional grid 45 in which a gas blocking effect occurs, the pumping grid 44 simultaneously causes a homogenization of the gas leak. The material of the additional grid 45 can be adapted to the respective mechanical and / or chemical requirements, since there is no demand on the electrical conductivity of the additional grid 45.
    In principle, the pumping grids 44 can also assume the function of achieving a gas blocking effect. However, this is disadvantageous in the deposition of plasma processes, since in such a case the pumping grids 45 will also be deposited. Thus, a change in the gas conductance of the pumping grids 45 increases, leading to an indefinite change in the process parameters. Figure 9 schematically shows such an arrangement, in which similar details of the construction of Figure 9 are referred to in a similar manner to Figure 8. The pumping grid 46 serves in that construction as a gas conductance plate providing a gas blocking effect as the additional grid 45 of Figure 8, since the pumping grid 46 of Figure 9 consists of an electrically conductive material.
    Thus, the gas blocking effect is used in embodiments of the present invention during the supply of fresh gases as well as during the escape of used gases out of the process compartment under the most advantageous conditions.
    The present invention makes it possible to deposit layers on substrates with a high uniformity of thickness, in which the gas flow at the gas inlet and / or at the gas outlet is controllable, in particular by the gas blocking effect. The present invention makes it possible to increase the usable area for large area deposition and to reduce the requirements of the gas precursor for a given yield. As a consequence, the gas consumption of the source as well as the trace of the deposition tool can be reduced, leading to the cost of improving the property.
    权利要求:
    Claims (12)
    [0001]
    1. CHEMICAL VAPOR DEPOSITION REACTOR INTENSIFIED BY PLASMA OF PARALLEL PLATE WITH CAPACITIVE COUPLING, which comprises a gas distribution unit (10) which is integrated with an RF electrode (2, 36, 50, 50 ') and which comprises at least one gas outlet (8a, 8b; 34; 43a, 43b), characterized by the fact that the gas distribution unit (10) comprises a multi-stage shower head constructed in such a way that it provides an independent adjustment of gas distribution and gas emission profile of the gas distribution unit (10), in which the gas distribution unit (10) comprises, in the direction of the gas flow through the reactor (1, 1 '), at least a first perforated gas distribution plate (12) and at least one second perforated gas distribution plate (13, 13 ', 23) which is spaced from the first gas distribution plate (12), the holes (16 , 16 ', 27) on the second gas distribution plate (13, 13', 23) are constructed with a cut t cross-section larger than the holes (14, 19, 24) in the first gas distribution plate (12), and in which separate gas buffer volumes (15, 15 ', 25) are provided between single holes (14, 19, 24) or groups of holes (14, 19, 24) of the first gas distribution plate (12) and the second gas distribution plate (13, 13 ', 23) in which the gas buffer volumes ( 15, 15 ', 25) connect them, respectively, in which the gas buffer volumes (15, 15', 25) are constructed with a greater cross-section than the holes (16, 16 ', 27) in the second plate gas distribution (13, 13 ', 23).
    [0002]
    2. REACTOR according to claim 1, characterized in that the first gas distribution plate (12) has a gas flow conductance such that it is capable of producing a decrease in gas pressure which is necessary to achieve a blocking effect of gas through the first gas distribution plate (12).
    [0003]
    REACTOR according to either of claims 1 or 2, characterized in that the first gas distribution plate comprises a perforated metal sheet (18) with a defined hole arrangement.
    [0004]
    4. REACTOR according to claim 3, characterized in that the perforated metal sheet (18) is fixed by an additional perforated plate (17).
    [0005]
    REACTOR according to any one of claims 1 to 4, characterized in that the holes (16) in the second gas distribution plate (13, 13 ', 23) comprise countersinks on the side of the gas exhaust and / or on the side of the gas inlet.
    [0006]
    6. REACTOR according to any one of claims 1 to 5, characterized in that the hole density of the second gas distribution plate (13, 13 ', 23) is higher at the edges of the same (29), in a close region pumping grids (4a, 4b) provided laterally to the RF electrode (2, 36, 50, 50 '), respectively, than in the central part (28) of the second gas distribution plate (13, 13', 23 ).
    [0007]
    REACTOR according to any one of claims 1 to 6, characterized in that additional rows (30a, 30b) of holes (14, 16) of the gas distribution plates (12; 13, 13 ', 23) are provided in an outer edge of the gas distribution unit (10), towards the gas outlet (8a, 8b; 34; 43a, 43b) of the reactor (1, 1 ').
    [0008]
    8. REACTOR according to any one of claims 1 to 7, characterized in that the gas purge channels (32; 42a, 42b) extending in the direction of the gas flow through the reactor (1, 1 ') are provided between the pumping grids (31; 41a, 41b) provided laterally to the RF electrode (2, 36), respectively, and the gas outlet (34; 43a, 43b) of the reactor (1).
    [0009]
    9. REACTOR, according to claim 8, characterized in that the gas purge channels (32) are formed by several parallel gas deflectors (33) supplied in the direction of the gas flow through the reactor (1, 1 ') behind the pumping grids (31).
    [0010]
    REACTOR according to either of claims 8 or 9, characterized in that the gas purge channels (42a, 42b) are integrated with at least one wall (35, 35 ') of the reactor (1, 1').
    [0011]
    11. REACTOR according to any one of claims 1 to 10, characterized in that at least one additional grid (45) is provided between the pumping grids (44) provided laterally to the RF electrode (2, 36, 50, 50 ' ), respectively, and the gas outlet of the reactor (1, 1 '), said additional grid (45) having a reduced gas flow conductance compared to the pumping grids (44).
    [0012]
    12. REACTOR according to any one of claims 1 to 11, characterized in that the pumping grid (s) (46) and / or the additional grid (45) have or have a gas flow conductance such that the respective grid (45, 46) is capable of producing a decrease in gas pressure that is necessary to achieve a gas blocking effect by the grid (45, 46).
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    同族专利:
    公开号 | 公开日
    EP2360292A1|2011-08-24|
    MY164472A|2017-12-15|
    US20120304933A1|2012-12-06|
    KR101696333B1|2017-01-23|
    WO2011095846A1|2011-08-11|
    CN102762764A|2012-10-31|
    EP2360292B1|2012-03-28|
    CN102762764B|2014-07-16|
    SG182416A1|2012-08-30|
    EP2360292A8|2012-02-29|
    JP5810448B2|2015-11-11|
    AT551439T|2012-04-15|
    JP2013518989A|2013-05-23|
    KR20130001235A|2013-01-03|
    BR112012019479B8|2021-03-23|
    US9224581B2|2015-12-29|
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    法律状态:
    2018-04-10| B06F| Objections, documents and/or translations needed after an examination request according art. 34 industrial property law|
    2020-04-07| B25D| Requested change of name of applicant approved|Owner name: MEYER BURGER (GERMANY) AG (DE) |
    2020-04-28| B25D| Requested change of name of applicant approved|Owner name: MEYER BURGER (GERMANY) GMBH (DE) |
    2020-05-26| B25L| Entry of change of name and/or headquarter and transfer of application, patent and certificate of addition of invention: publication cancelled|Owner name: MEYER BURGER (GERMANY) AG (DE) Free format text: ANULADA A PUBLICACAO CODIGO 25.4 NA RPI NO 2573 DE 28/04/2020 POR TER SIDO INDEVIDA. |
    2020-06-09| B25D| Requested change of name of applicant approved|Owner name: MEYER BURGER (GERMANY) GMBH (DE) |
    2021-01-19| B09A| Decision: intention to grant|
    2021-02-23| B16A| Patent or certificate of addition of invention granted|Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 23/02/2021, OBSERVADAS AS CONDICOES LEGAIS. |
    2021-03-23| B16C| Correction of notification of the grant|Free format text: REF. RPI 2616 DE 23/02/2021 QUANTO AO INVENTOR. |
    优先权:
    申请号 | 申请日 | 专利标题
    EP10401018A|EP2360292B1|2010-02-08|2010-02-08|Parallel plate reactor for uniform thin film deposition with reduced tool foot-print|
    EP10401018|2010-02-08|
    PCT/IB2010/053138|WO2011095846A1|2010-02-08|2010-07-09|Parallel plate reactor for uniform thin film deposition with reduced tool foot-print|
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